Datasheet > V15P45HM3-86A

V15P45HM3-86A

更新时间： 2024-11-01 08:14:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	91K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V15P45HM3-86A 数据手册

New Product

V15P45

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.31 V at I_F= 5 A

FEATURES

TMBS^®eSMP^®Series

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified

TO-277A (SMPC)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Anode 1

Anode 2

Cathode

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

15 A

45 V

MECHANICAL DATA

V_RRM

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_FSM

210 A

0.42 V

150 °C

V_Fat I_F= 15 A

T_Jmax.

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V15P45

V1545

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum DC forward current

(2)

I_F

4.8

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

210

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Document Number: 89342

Revision: 19-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V15P45HM3-86A相关器件

型号	品牌	获取价格	描述	数据表
V15P45HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45-M3	VISHAY	获取价格	5High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45-M3/86A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V15P45-M3/87A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V15P45-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45-M3-86A	VISHAY	获取价格	5High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45-M3-87A	VISHAY	获取价格	5High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45S	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifiers
V15P45S_13	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifiers
V15P45S-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifiers

与V15P45HM3-86A相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

V15P45HM3-86A

V15P45HM3-86A 数据手册

与V15P45HM3-86A相关器件

与V15P45HM3-86A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V15P45HM3-86A

V15P45HM3-86A 数据手册

与V15P45HM3-86A相关器件

与V15P45HM3-86A相关文章

您还可以找

您在本页遇到什么问题？