Datasheet > V15P22

V15P22

更新时间： 2024-11-02 02:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	106K
描述
High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V15P22 数据手册

V15P22

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.56 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

15 A

200 V

220 A

0.69 V

175 °C

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

I_FSM

Base P/N-M3

halogen-free, RoHS-compliant, and

V_Fat I_F= 15 A (125 °C)

T_Jmax.

commercial grade

Base P/NHM3

- halogen-free, RoHS-compliant and

AEC-Q101 qualified

Package

SMPC (TO-277A)

Single

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V15P22

V1522

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

3.3

Peak forward surge current 10 ms single half sine-wave 

superimposed on rated load

I_FSM

220

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1R_JA

Revision: 13-May-2020

Document Number: 87020

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V15P22相关器件

型号	品牌	获取价格	描述	数据表
V15P22HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P22HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P22-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P22-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P45	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45_1109	VISHAY	获取价格	5High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45_15	VISHAY	获取价格	High Current Density Surface Mount
V15P45HM3/86A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V15P45HM3/87A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V15P45HM3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 4.8A, 45V V(RRM), Silicon, TO-277A, HALOGEN

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