Datasheet > V10P45-87A

V10P45-87A

更新时间： 2024-01-18 04:12:32

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	90K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V10P45-87A 数据手册

New Product

V10P45

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.34 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TO-277A (SMPC)

• Halogen-free according to IEC 61249-2-21 definition

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

10 A

45 V

V_RRM

I_FSM

180 A

0.41 V

150 °C

Base P/N-M3

- halogen-free, RoHS compliant, and

V_Fat I_F= 10 A

T_Jmax.

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10P45

V1045

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum DC forward current

(2)

I_F

4.4

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

180

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 07-Sep-11

Document Number: 89340

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与V10P45-87A相关器件

型号	品牌	获取价格	描述	数据表
V10P45HM3/86A	VISHAY	获取价格	DIODE 4.4 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V10P45HM3/87A	VISHAY	获取价格	DIODE 4.4 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V10P45HM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 4.4A, 45V V(RRM), Silicon, TO-277A, HALOGEN
V10P45HM3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P45HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P45-M3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P45-M3/86A	VISHAY	获取价格	DIODE 4.4 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V10P45-M3/87A	VISHAY	获取价格	DIODE 4.4 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V10P45-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P45-M386A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

与V10P45-87A相关文章

手册解读：MMBT3904参数与管脚图及代换
2024-07-01

1
74LS298PC手册解读：参数说明、引脚说明、替代型号推荐
2024-07-01

0
L6234手册解读：引脚信息、电气参数
2024-07-01

1
解读BSP135H6327资料：电气参数及替换型号推荐
2024-07-01

1

产品中心

服务支持

精选活动

关于我们

帮助中心

V10P45-87A

V10P45-87A 数据手册

与V10P45-87A相关器件

与V10P45-87A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V10P45-87A

V10P45-87A 数据手册

与V10P45-87A相关器件

与V10P45-87A相关文章

您还可以找

您在本页遇到什么问题？