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V10P45S-M3-86A PDF预览

V10P45S-M3-86A

更新时间: 2024-02-21 17:41:18
品牌 Logo 应用领域
威世 - VISHAY 电池
页数 文件大小 规格书
5页 86K
描述
SMD Photovoltaic Solar Cell Protection Schottky Rectifier

V10P45S-M3-86A 数据手册

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New Product  
V10P45S  
Vishay General Semiconductor  
SMD Photovoltaic Solar Cell Protection Schottky Rectifier  
Ultra Low VF = 0.34 V at IF = 5 A  
FEATURES  
TMBS® eSMP® Series  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
2
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TO-277A (SMPC)  
K
Anode 1  
Anode 2  
Halogen-free according to IEC 61249-2-21 definition  
Cathode  
TYPICAL APPLICATIONS  
For use in solar cell junction box as a bypass diode for  
protection, using DC forward current without reverse bias.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
10 A  
45 V  
VRRM  
IFSM  
180 A  
0.41 V  
150 °C  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
VF at IF = 10 A  
TOP max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V10P45S  
1045S  
45  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
V
A
(1)  
IF  
10  
Maximum DC forward current  
(2)  
IF  
4.4  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
180  
A
Junction temperature in DC forward current  
without reverse bias, t 1 h  
(3)  
TJ  
200  
°C  
Operating junction temperature range  
Storage temperature range  
TOP  
- 40 to + 150  
- 40 to + 175  
°C  
°C  
TSTG  
Notes  
(1)  
(2)  
(3)  
Mounted on 30 mm x 30 mm aluminum PCB  
Free air, mounted on recommended copper pad area  
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test  
Document Number: 89341  
Revision: 19-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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