Datasheet > V10P45-M3_15

V10P45-M3_15

更新时间： 2024-01-02 18:39:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	84K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10P45-M3_15 数据手册

V10P45-M3, V10P45HM3

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.34 V at I_F= 5 A

FEATURES

TMBS^®eSMP^®Series

Available

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

TO-277A (SMPC)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

10 A

45 V

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_FSM

180 A

0.41 V

150 °C

V_Fat I_F= 10 A

T_Jmax.

halogen-free, RoHS-compliant, and

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

Package

TO-277A (SMPC)

Single die

Diode variation

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10P45

V1045

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum DC forward current

(2)

I_F

4.4

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

180

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 06-May-15

Document Number: 89340

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V10P45-M3_15相关器件

型号	品牌	获取价格	描述	数据表
V10P45-M386A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P45-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P45-M3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P45S	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifier
V10P45S_13	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifier
V10P45S-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
V10P45S-M3/86A	VISHAY	获取价格	DIODE 4.4 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V10P45S-M3/87A	VISHAY	获取价格	DIODE 4.4 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V10P45S-M3_15	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifier
V10P45S-M3-86A	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifier

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