是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.16 | 雪崩能效等级(Eas): | 60 mJ |
配置: | Single | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 125 W | 最大脉冲漏极电流 (IDM): | 48 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 405 ns |
最大开启时间(吨): | 95 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UTT12P10G-TN3-R | UTC |
获取价格 |
100V, 12A P-CHANNEL POWER MOSFET | |
UTT12P10G-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
UTT12P10L-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
UTT12P10L-TN3-R | UTC |
获取价格 |
100V, 12A P-CHANNEL POWER MOSFET | |
UTT12P10L-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
UTT130N06M | UTC |
获取价格 |
N-CH | |
UTT130N06MG-TQ2-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UTT130N06MG-TQ2-T | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UTT130N06ML-S08-R | UTC |
获取价格 |
Small Signal Field-Effect Transistor, | |
UTT130N06ML-TQ2-R | UTC |
获取价格 |
Power Field-Effect Transistor, |