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UTT12P10G-TN3-T PDF预览

UTT12P10G-TN3-T

更新时间: 2024-11-20 19:51:15
品牌 Logo 应用领域
友顺 - UTC 开关脉冲晶体管
页数 文件大小 规格书
5页 280K
描述
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

UTT12P10G-TN3-T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.16雪崩能效等级(Eas):60 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):48 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):405 ns
最大开启时间(吨):95 nsBase Number Matches:1

UTT12P10G-TN3-T 数据手册

 浏览型号UTT12P10G-TN3-T的Datasheet PDF文件第2页浏览型号UTT12P10G-TN3-T的Datasheet PDF文件第3页浏览型号UTT12P10G-TN3-T的Datasheet PDF文件第4页浏览型号UTT12P10G-TN3-T的Datasheet PDF文件第5页 
UNISONIC TECHNOLOGIES CO., LTD  
UTT12P10  
Power MOSFET  
100V, 12A P-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC UTT12P10 is a P-channel power MOSFET using UTC’s  
advanced technology to provide the customers with high switching  
speed, cost-effectiveness and a minimum on-state resistance. It can  
also withstand high energy in the avalanche.  
FEATURES  
* RDS(ON)<0.2@ VGS=-10V, ID=-12A  
* High Switching Speed  
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
S
S
S
UTT12P10L-TM3-T  
UTT12P10G-TM3-T  
UTT12P10G-TN3-T  
UTT12P10G-TN3-R  
TO-251  
TO-252  
TO-252  
G
G
G
Tube  
Tube  
UTT12P10L-TN3-T  
UTT12P10L-TN3-R  
Tape Reel  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 5  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R502-722.E  

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