是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.67 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.095 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT3055L-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met | |
UT3055L-TN3-R | UTC |
获取价格 |
12A, 25V N-CHANNEL POWER MOSFET | |
UT3055L-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met | |
UT3055-TM3-T | UTC |
获取价格 |
Transistor | |
UT3055-TN3-R | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met | |
UT3055-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met | |
UT3060 | MICROSEMI |
获取价格 |
RECTIFIERS | |
UT3060E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, ROHS COMPLIANT, | |
UT3080 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, | |
UT3080E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, |