Datasheet > UT2N10G-TN3-R

UT2N10G-TN3-R

更新时间： 2024-09-15 07:08:59

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	145K
描述
2 Amps,100 Volts N-CHANNEL POWER MOSFET

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UT2N10G-TN3-R 数据手册

UT2N10

Preliminary

Power MOSFET

2 Amps,100 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC UT2N10 is N-Channel enhancement mode silicon gate

power FET.it uses a special gate oxide designed to provide full rated

conductance at gate biases through 3V ~ 5V and facilitate true on-off

power control directly from logic circuit supply voltages.

The UTC UT2N10 is universally applied in logic level (5V) driving

sources, such as automotive switching, solenoid drivers and

programmable controllers.

FEATURES

* 2A, 100V

* R_DS(ON)= 1.050Ω

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-252

Packing

Lead Free

Halogen Free

UT2N10L-TN3-R

UT2N10G-TN3-R

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

UNISONIC TECHNOLOGIES CO., LTD

1 of 3

QW-R502-511.a

www.unisonic.com.tw

12 3

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