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UT28F64T-35UCC PDF预览

UT28F64T-35UCC

更新时间: 2024-09-12 23:40:47
品牌 Logo 应用领域
其他 - ETC 内存集成电路可编程只读存储器OTP只读存储器
页数 文件大小 规格书
10页 90K
描述
x8 PROM

UT28F64T-35UCC 数据手册

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Standard Products  
UT28F64 Radiation-Hardened 8K x 8 PROM  
Data Sheet  
August 2001  
FEATURES  
Memory cell LET threshold: >128 MeV-cm2/mg  
q QML Q & V compliant part  
q Programmable, read-only, asynchronous, radiation-  
-
hardened, 8K x 8 memory  
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Supported by industry standard programmer  
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AC and DC testing at factory  
o
q 35ns and 45ns maximum address access time (-55 C to  
q Packaging options:  
o
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28-pin 100-mil center DIP (0.600 x 1.4)  
28-lead 50-mil center flatpack (0.490 x 0.74)  
+125 C)  
q TTL compatible input and TTL/CMOS compatible output  
levels  
q VDD: 5.0 volts + 10%  
q Three-state data bus  
q Standard Microcircuit Drawing 5962-96873  
q Low operating and standby current  
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Operating: 100mA maximum @28.6MHz  
Derating: 3mA/MHz  
Standby: 500mA maximum (post-rad)  
·
PRODUCT DESCRIPTION  
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The UT28F64 amorphous silicon anti-fuse PROM is a high  
performance, asynchronous, radiation-hardened,  
q Radiation-hardened process and design; total dose  
irradiation testing to MIL-STD-883, Method 1019  
8K x 8 programmable memory device. The UT28F64 PROM  
features fully asychronous operation requiring no external clocks  
or timing strobes. An advanced radiation-hardened twin-well  
CMOS process technology is used to implement the UT28F64.  
The combination of radiation- hardness, fast access time, and low  
power consumption make the UT28F64 ideal for high speed  
systems designed for operation in radiation environments.  
-
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Total dose: 1E6 rad(Si)  
LETTH(0.25) ~ 100 MeV-cm2/mg  
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SEL Immune >128 MeV-cm2/mg  
- Saturated Cross Section cm2 per bit, 1.0E-11  
- 1.2E-8 errors/device-day, Adams 90% geosynchronous  
heavy ion  
MEMORY  
ARRAY  
A(12:0)  
DECODER  
SENSE AMPLIFIER  
CE  
CONTROL  
LOGIC  
PE  
OE  
DQ(7:0)  
PROGRAMMING  
Figure 1. PROM Block Diagram