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UT2N10G-T92-B PDF预览

UT2N10G-T92-B

更新时间: 2024-11-02 00:49:43
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 215K
描述
N-CHANNEL POWER MOSFET

UT2N10G-T92-B 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
UT2N10  
Power MOSFET  
2 Amps,100 Volts  
N-CHANNEL POWER MOSFET  
DESCRIPTION  
The UTC UT2N10 is N-Channel enhancement mode silicon gate  
power FET.it uses a special gate oxide designed to provide full rated  
conductance at gate biases through 3V ~ 5V and facilitate true on-off  
power control directly from logic circuit supply voltages.  
The UTC UT2N10 is universally applied in logic level (5V) driving  
sources, such as automotive switching, solenoid drivers and  
programmable controllers.  
FEATURES  
* RDS(ON) < 1.050@ VGS=5V, ID=2A  
* Design Optimized for 5V Gate Drives  
* Can be Driven Directly from QMOS, NMOS, TTL Circuits  
* Compatible with Automotive Drive Requirements  
* SOA is Power Dissipation Limited  
* Nanosecond Switching Speeds  
* Linear Transfer Characteristics  
* High Input Impedance  
* Majority Carrier Device  
SYMBOL  
www.unisonic.com.tw  
1 of 4  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R502-511.F  

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