Datasheet > UT200_15

UT200_15

更新时间： 2024-09-16 01:18:43

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LED

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UT200_15 数据手册

Cree^®UltraThin™ LED

Data Sheet

CxxxUT200-Sxxxx

Cree’s UltraThin LEDs combine highly efﬁcient InGaN materials with Cree’s proprietary G•SiC^®substrate to deliver

superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low

forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical speciﬁcations and the

ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner

form factors are required.

FEATURES

APPLICATIONS

•

Small Chip – 200 x 200 x 85 μm

UT LED Performance

5.5 mW min. (455–475 nm) Blue

Low Forward Voltage

2.9 V Typical at 5 mA

•

Mobile Phone Keypads

Audio Product Display Lighting

Mobile Appliance Keypads

Automotive Applications

–

•

–

•

Single Wire Bond Structure

Class 2 ESD Rating

CxxxUT200-Sxxxx Chip Diagram

Top View

Bottom View

Die Cross Section

SiC Substrate

Bottom Surface

115 x 115 μm

G•SiC LED Chip

200 x 200 μm

InGaN

Anode (+)

Mesa (junction)

150 x 150 μm

SiC Substrate

h = 85 μm

Gold Bond Pad

90 μm Diameter

Backside

Metallization

80 x 80 μm

Cathode (-)

Subject to change without notice.

www.cree.com

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