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UT110N03_10

更新时间： 2024-09-13 07:08:59

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UT110N03_10 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT110N03

Power MOSFET

N-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UT110N03 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* V_DS(V)=26V

* I_D=110A

* R_DS(ON)=4.8mΩ@V_GS=10 V

* R_DS(ON)=7.0mΩ@V_GS=4.5 V

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-220

Packing

Tube

Lead Free

Halogen Free

UT110N03G-TA3-T

UT110N03L-TA3-T

www.unisonic.com.tw

1 of 4

QW-R502-367.B

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UT110N03L-TA3-T	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE
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