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UPS1040CTE3 PDF预览

UPS1040CTE3

更新时间： 2024-11-24 19:54:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 功效二极管
页数 文件大小 规格书
6页 168K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE3, 2 PIN

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中文翻译

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UPS1040CTE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：R-PSSO-G2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.41应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.42 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：40 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

UPS1040CTE3 数据手册

 浏览型号UPS1040CTE3的Datasheet PDF文件第2页浏览型号UPS1040CTE3的Datasheet PDF文件第3页浏览型号UPS1040CTE3的Datasheet PDF文件第4页浏览型号UPS1040CTE3的Datasheet PDF文件第5页浏览型号UPS1040CTE3的Datasheet PDF文件第6页 
UPS1040CTe3  
10 A Dual Schottky Barrier Rectifiers  
KEY FEATURES  
DESCRIPTION  
This UPS1040CTe3 in the Powermite3® package is a high efficiency center-  
tap dual Schottky rectifier that is also RoHS compliant offering high  
current/power capabilities previously found only in much larger packages.  
They are ideal for SMD applications that operate at high frequencies. In  
addition to its size advantages, the Powermite3® package includes a full  
metallic bottom that eliminates the possibility of solder flux entrapment  
during assembly and a unique locking tab act as an efficient heat path to the  
heat-sink mounting. Its innovative design makes this device ideal for use  
with automatic insertion equipment.  
ƒ Very low thermal resistance package  
ƒ Dual center-tap Schottky configuration with  
common cathode  
ƒ RoHS Compliant with e3 suffix part number  
ƒ Guard-ring-die construction for transient  
protection  
ƒ Efficient heat path with Integral locking bottom  
metal tab  
ƒ Low forward voltage  
ƒ Full metallic bottom eliminates flux entrapment  
ƒ Compatible with automatic insertion  
ƒ Low profile-maximum height of 1mm  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
APPLICATIONS/BENEFITS  
Rating  
Symbol  
Value  
Unit  
ƒ Switching and Regulating Power supplies.  
ƒ Silicon Schottky (hot carrier) rectifier for  
minimal reverse voltage recovery  
ƒ Elimination of reverse-recovery oscillations to  
reduce need for EMI filtering  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
RMS Reverse Voltage  
28  
10  
V
A
V R (RMS)  
Io  
ƒ Charge Pump Circuits  
ƒ Reduces reverse recovery loss with low IRM  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on Rated Load@ Tc =90 ºC  
ƒ Small foot print  
150  
A
IFSM  
190 X 260 mils (1:1 Actual size)  
See mounting pad details on pg 5  
Storage Temperature  
Junction Temperature  
TSTG  
TJ  
-55 to +150  
-55 to +125  
ºC  
ºC  
MECHANICAL & PACKAGING  
• CASE: Void-free transfer molded  
thermosetting epoxy compound meeting  
UL94V-0  
• FINISH: Annealed matte-Tin plating over  
copper and readily solderable per MIL-STD-  
750 method 2026 (consult factory for Tin-Lead  
plating)  
THERMAL CHARACTERISTICS  
(UNLESS OTHERWISE SPECIFIED)  
Thermal Resistance (dual device)  
Junctions-to Bottom (Case)  
2.5  
ºC/Watt  
RθJC  
• POLARITY: See figure (left)  
• MARKING: S1040CT•  
• WEIGHT: 0.072 gram (approx.)  
• Package dimension on last page  
•
Tape & Reel option: 16 mm tape per Standard  
EIA-481-B, 5000 on 13” reel  
Copyright © 2007  
10/15/2007 Rev D  
Microsemi  
Page 1  
123456

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