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UPS120TR7E3 PDF预览

UPS120TR7E3

更新时间： 2024-11-25 04:55:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
4页 417K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-1

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UPS120TR7E3 技术参数

生命周期：Obsolete零件包装代码：DO-216AA
包装说明：S-PSSO-G1针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.3
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-216AAJESD-30 代码：S-PSSO-G1
JESD-609代码：e3元件数量：1
端子数量：1最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：20 V
表面贴装：YES技术：SCHOTTKY
端子面层：Matte Tin (Sn) - annealed端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

UPS120TR7E3 数据手册

 浏览型号UPS120TR7E3的Datasheet PDF文件第2页浏览型号UPS120TR7E3的Datasheet PDF文件第3页浏览型号UPS120TR7E3的Datasheet PDF文件第4页 
UPS120e3  
Schottky Barrier Rectifier  
Main product characteristics  
IO  
1A  
VRRM  
20V  
Tj(MAX)  
VF(MAX)  
125ºC  
0.415V  
Features and benefits  
•
•
•
•
Low forward voltage drop  
Low profile package height  
Efficient heat path with integral locking bottom metal tab  
Low thermal resistance DO-216AA package  
Powermite 1  
(DO-216AA)  
Description and applications  
Single schottky rectifier assembled in Powermite 1® package which features a full metallic bottom that  
eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique  
locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with  
very low thermal resistance junction to case (bottom).  
This product is suitable for use in switching and regulating power supplies and also charge pump  
circuits.  
Absolute maximum ratings(1)  
Symbol  
Parameter  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
20  
V
VR(RMS)  
RMS Reverse Voltage  
14  
V
A
Average rectified forward output current  
(TC = 135ºC)  
IO  
1.0  
Peak repetitive forward current  
(100kHz square wave, TC = 135ºC)  
Non repetitive peak forward surge current  
(8.3ms single half sine wave)  
IFRM  
IFSM  
2.0  
50  
A
A
dV/dt  
TSTG  
TJ  
Voltage rate of change (at max VR)  
Storage temperature  
10000  
V/µs  
ºC  
-55 to +150  
-55 to +125  
Junction temperature  
ºC  
(1) All ratings at 25ºC unless specified otherwise  
Copyright © 2008  
June 2008 Rev E  
1/4  
www.Microsemi.com  
1234

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