生命周期: | Transferred | 包装说明: | S-PSSO-G1 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 3.63 |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-216AA | JESD-30 代码: | S-PSSO-G1 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 1 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出电流: | 1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 20 V | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPS120E/TR13 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, PLASTIC PACKAGE-2 |
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UPS120E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P |
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UPS120E3/TR13 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P |
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UPS120E3/TR7 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P |
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UPS120EE3/TR7 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P |
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UPS120TR13E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P |
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UPS120TR7E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P |
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UPS12240 | CSB-BATTERY |
获取价格 |
specially designed for high efficient discharge application |
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UPS122406 | CSB-BATTERY |
获取价格 |
Its characteristics are high energy density, small footprint and high discharge efficiency |
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UPS122406_16 | CSB-BATTERY |
获取价格 |
Cells per unit 6 Voltage per unit 12 |
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