Datasheet > UPG187GR-E1-A

UPG187GR-E1-A

更新时间： 2024-11-18 15:56:15

品牌	Logo	应用领域
日电电子 - NEC		射频微波光电二极管
页数	文件大小	规格书
9页	41K
描述
SPDT, 950MHz Min, 2150MHz Max, 3dB Insertion Loss-Max, PLASTIC, HTSSOP-16

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中文翻译

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技术参数
数据手册

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UPG187GR-E1-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	PLASTIC, HTSSOP-16	Reach Compliance Code：	compliant
风险等级：	5.65	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	10 dBm
最大插入损耗：	3 dB	最大工作频率：	2150 MHz
最小工作频率：	950 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	SPDT
Base Number Matches：	1

UPG187GR-E1-A 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG187GR

GaAs MMIC DBS TWIN-SPDT FOR 2 x 2 SWITCH MATRIX

DESCRIPTION

The µPG187GR is intended for use in Direct Broadcast Satellite (DBS) applications within the Low Noise Block

(LNB) down-converter for systems where at least multi LNB are required.

FEATURES

•

High isolation

: ISL = 42 dB TYP. (D/U-ratio)

: V^cont= 0 V/+5 V

Control voltage

Insertion loss

: L^INS= 1.8 dB TYP. (Z^O= 50 Ω)

16-pin plastic HTSSOP package

ORDERING INFORMATION

Part Number

Package

16-pin plastic HTSSOP

Supplying Form

µPG187GR-E1

• Embossed tape 12 mm wide

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG187GR

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10172EJ01V0DS (1st edition)

Date Published July 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2001, 2002

12 3 4 5 6 7...9

中文翻译

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