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UPG2006TB-E3-A PDF预览

UPG2006TB-E3-A

更新时间: 2024-11-18 20:53:35
品牌 Logo 应用领域
日电电子 - NEC 射频微波光电二极管
页数 文件大小 规格书
12页 66K
描述
SPDT, 500MHz Min, 2500MHz Max, 0.65dB Insertion Loss-Max, SUPER MINIMOLD PACKAGE-6

UPG2006TB-E3-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.64
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):23.01 dBm最大插入损耗:0.65 dB
JESD-609代码:e6最大工作频率:2500 MHz
最小工作频率:500 MHz最高工作温度:85 °C
最低工作温度:-45 °C射频/微波设备类型:SPDT
端子面层:Tin/Bismuth (Sn/Bi)Base Number Matches:1

UPG2006TB-E3-A 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2006TB  
L, S-BAND 1.8 V CONTROL VOLTAGE SPDT SWITCH  
DESCRIPTION  
The µPG2006TB is an L, S-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for  
digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low  
insertion loss and high isolation by 1.8 V control voltage.  
FEATURES  
Low insertion loss  
: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz  
LINS = 0.45 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz  
: ISL = 29 dB TYP. @ Vcont = 1.8 V/0 V, f = 2 GHz  
ISL = 25 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz  
High isolation  
6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
APPLICATION  
L, S-band digital cellular or cordless telephone  
BuletoothTM, W-LAN and WLL applications  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G2J  
Supplying Form  
Embossed tape 8 mm wide  
µPG2006TB-E3  
6-pin super minimold  
Pin 1, 2, 3 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2006TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10179EJ01V0DS (1st edition)  
Date Published September 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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