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UPG2012TB_1 PDF预览

UPG2012TB_1

更新时间: 2024-11-18 05:53:55
品牌 Logo 应用领域
日电电子 - NEC 开关光电二极管
页数 文件大小 规格书
9页 68K
描述
L-BAND SPDT SWITCH

UPG2012TB_1 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2012TB  
L-BAND SPDT SWITCH  
DESCRIPTION  
The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for  
mobile phone and another L-band application.  
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.  
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface  
mounting.  
FEATURES  
Supply voltage  
: VDD = 2.7 to 3.0 V (2.8 V TYP.)  
Switch control voltage  
: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)  
: Vcont (L) = 0.2 to +0.2 V (0 V TYP.)  
Low insertion loss  
High isolation  
: LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V  
: LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V  
: LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference  
value)  
: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V  
: ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference  
value)  
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
APPLICATIONS  
L-band digital cellular or cordless telephone  
PCS, W-LAN, WLL and BluetoothTM etc.  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G3A  
Supplying Form  
Embossed tape 8 mm wide  
µPG2012TB-E3  
6-pin super minimold  
Pin 1, 2, 3 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2012TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10218EJ01V0DS (1st edition)  
Date Published December 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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