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UPG2022TB-E4-A PDF预览

UPG2022TB-E4-A

更新时间: 2024-11-18 20:32:55
品牌 Logo 应用领域
日电电子 - NEC 射频微波光电二极管
页数 文件大小 规格书
8页 69K
描述
SPDT, 4800MHz Min, 5850MHz Max, 1.1dB Insertion Loss-Max, 2 X 1.25 MM, 0.90 MM HEIGHT, SUPER MINIMOLD PACKAGE-6

UPG2022TB-E4-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.63
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):36.02 dBm最大插入损耗:1.1 dB
JESD-609代码:e6最大工作频率:5850 MHz
最小工作频率:4800 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:SPDT
端子面层:Tin/Bismuth (Sn/Bi)Base Number Matches:1

UPG2022TB-E4-A 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2022TB  
GaAs MMIC SPDT HIGH POWER SWITCH FROM 4.8 TO 5.85 GHz  
DESCRIPTION  
The µPG2022TB is a GaAs FET MMIC SPDT (Single Pole Double Throw) high power switch. The device can  
operate from 4.8 to 5.85 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package and  
contributes to miniaturizing the system.  
FEATURES  
Operating frequency  
Low insertion loss  
: f = 4.8 to 5.85 GHz  
: LINS = 0.8 dB TYP. @ f = 4.9 to 5.2 GHz  
LINS = 0.9 dB TYP. @ f = 5.8 GHz  
Handling power  
: Pin (0.1dB) = +30 dBm TYP. @ f = 4.9 to 5.2 GHz  
Pin (0.1dB) = +31 dBm TYP. @ f = 5.2 to 5.85 GHz  
: Vcont = +2.8 V/0 V  
Control voltage  
High isolation  
: ISL1 (between OUTPUT1 and OUTPUT2) = 18 dB TYP. @ f = 5.8 GHz  
: ISL2 (between INPUT and OUTPUT) = 29 dB TYP. @ f = 5.8 GHz  
Input/output return loss : RLin/RLout = 10 dB MIN. @ f = 4.8 to 5.85 GHz  
Switching speed : 20 ns @ tRISE/tFALL (10/90% RF)  
6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
APPLICATIONS  
5 GHz band wireless LAN  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G3L  
Supplying Form  
Embossed tape 8 mm wide  
µPG2022TB-E4  
6-pin super minimold  
Pin 4, 5, 6 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2022TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10473EJ01V0DS (1st edition)  
Date Published March 2004 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002, 2004  

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