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UPG2031TQ-E1 PDF预览

UPG2031TQ-E1

更新时间: 2024-11-11 07:05:31
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 91K
描述
L-BAND SP3T SWITCH

UPG2031TQ-E1 技术参数

生命周期:Obsolete包装说明:2.30 X 2.55 MM, 0.60 MM HEIGHT, PLASTIC, TSON-10
Reach Compliance Code:unknown风险等级:5.72
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):36.02 dBm最大插入损耗:0.8 dB
最大工作频率:2000 MHz最小工作频率:500 MHz
最高工作温度:85 °C最低工作温度:-45 °C
射频/微波设备类型:SP3TBase Number Matches:1

UPG2031TQ-E1 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2031TQ  
L-BAND SP3T SWITCH  
DESCRIPTION  
The µPG2031TQ is an L-band SP3T GaAs FET switch which was developed for CDMA/PCS/GPS triple mode  
digital cellular telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss  
and high linality.  
FEATURES  
Low insertion loss  
: LINS = 0.45 dB TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz  
: LINS = 0.55 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz  
: ISL = 21 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz  
: Pin (0.1 dB) = 33.0 dBm TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz  
High isolation  
High power  
High-density surface mounting : 10-pin plastic TSON package (2.30 × 2.55 × 0.60 mm)  
APPLICATION  
CDMA/PCS/GPS triple mode digital cellular telephone etc.  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
2031  
Supplying Form  
Embossed tape 8 mm wide  
µPG2031TQ-E1  
10-pin plastic TSON  
Pin 5, 6 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2031TQ  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10436EJ01V0DS (1st edition)  
Date Published September 2003 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2003  

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