Datasheet > 射频和微波 > 射频/微波放大器> UPG2106TB-E3

UPG2106TB-E3

更新时间： 2024-11-10 22:21:19

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器驱动
页数	文件大小	规格书
12页	88K
描述
L-BAND PA DRIVER AMPLIFIER

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中文翻译

获取价格

技术参数
数据手册

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UPG2106TB-E3 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.8
Is Samacsys：	N	构造：	COMPONENT
增益：	26 dB	最大输入功率 (CW)：	-8 dBm
JESD-609代码：	e0	最大工作频率：	960 MHz
最小工作频率：	889 MHz	最高工作温度：	90 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND LOW POWER
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

UPG2106TB-E3 数据手册

PRELIMINARY DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2106TB, µPG2110TB

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were

developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with

3.0 V, having the high gain and low distortion. The µPG2106TB is for 800 MHz band application, and the

µPG2110TB is for 1.5 GHz band application.

FEATURES

•

Low operation voltage

f^RF

: V^DD1= V^DD2= 3.0 V

: 889 to 960 MHz, 1429 to 1453 MHz@P^out= +8 dBm

: P^adj1= −60 dBc TYP. @V^DD= 3.0 V, P^out= +8 dBm, V^AGC= 2.5 V

External input and output matching

Low distortion

•

Low operation current

: I^DD= 25 mA TYP. @V^DD= 3.0 V, P^out= +8 dBm, V^AGC= 2.5 V

External input and output matching

Variable gain control function : ∆G = 40 dB TYP. @V^AGC= 0.5 to 2.5 V

External input and output matching

6-pin super minimold package

APPLICATION

Digital Cellular : PDC, IS-136 etc.

•

ORDERING INFORMATION (PLAN)

Part Number

Package

Supplying Form

µPG2106TB-E3

µPG2110TB-E3

6-pin super minimold

Carrier tape width is 8 mm.

Qty 3 kp/reel.

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample

order: µPG2106TB, µPG2110TB)

ABSOLUTE MAXIMUM RATINGS (T^A= +25 °C)

Parameter

Symbol

V^DD1, V^DD2

V^AGC

Pⁱⁿ

Ratings

6.0

Unit

Supply Voltage

AGC Control Voltage

Input Power

6.0

−8

dBm

°C

140^Note

−30 to +90

−35 to +150

Total Power Dissipation

Operating Ambient Temperature

Storage Temperature

P^tot

T^A

T^stg

°C

Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, T^A= +85 °C

Caution The IC must be handled with care to prevent static discharge because its circuit composed of

GaAs HJ-FET.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14318EJ1V0DS00 (1st edition)

Date Published October 1999 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...12

中文翻译

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与UPG2106TB-E3相关器件

型号	品牌	获取价格	描述	数据表
UPG2106TB-E3-A	CEL	获取价格	L-BAND PA DRIVER AMPLIFIER
UPG2110TB	CEL	获取价格	L-BAND PA DRIVER AMPLIFIER
UPG2110TB	NEC	获取价格	L-BAND PA DRIVER AMPLIFIER
UPG2110TB-A	NEC	获取价格	Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, SUPER MINIMOLD, 6 PIN
UPG2110TB-E3	NEC	获取价格	L-BAND PA DRIVER AMPLIFIER
UPG2110TB-E3-A	CEL	获取价格	L-BAND PA DRIVER AMPLIFIER
UPG2115TB	ETC	获取价格	IC
UPG2115TB-A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, SUPER MINIMOLD, 6 PIN
UPG2115TB-E3	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, SUPER MINIMOLD, 6 PIN
UPG2115TB-E3-A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, SUPER MINIMOLD, 6 PIN

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