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UPG2027TQ-A PDF预览

UPG2027TQ-A

更新时间: 2024-01-04 19:27:20
品牌 Logo 应用领域
日电电子 - NEC 射频微波光电二极管
页数 文件大小 规格书
8页 75K
描述
SPDT, 500MHz Min, 2000MHz Max, 0.75dB Insertion Loss-Max, 2.30 X 2.55 MM, 0.60 MM HEIGHT, PLASTIC, TSON-10

UPG2027TQ-A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:2.30 X 2.55 MM, 0.60 MM HEIGHT, LEAD FREE, PLASTIC, TSON-10Reach Compliance Code:compliant
风险等级:5.73特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):38.06 dBm
最大插入损耗:0.75 dB最大工作频率:2000 MHz
最小工作频率:500 MHz最高工作温度:85 °C
最低工作温度:-45 °C射频/微波设备类型:SPDT
Base Number Matches:1

UPG2027TQ-A 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2027TQ  
L-BAND 4 W HIGH POWER SPDT SWITCH  
DESCRIPTION  
The µPG2027TQ is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless  
telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss and high  
linality.  
FEATURES  
Low insertion loss  
: LINS = 0.40 dB TYP. @ Vcont = +2.5 V/0 V, f = 1.0 GHz  
: LINS = 0.50 dB TYP. @ Vcont = +2.5 V/0 V, f = 2.0 GHz  
High lineality  
: 2f0, 3f0 = 70 dBc TYP. @ Vcont = +2.5 V/0 V, f = 1.0 GHz, Pin = +35 dBm  
: 2f0, 3f0 = 70 dBc TYP. @ Vcont = +2.5 V/0 V, f = 2.0 GHz, Pin = +33 dBm  
High-density surface mounting : 10-pin plastic TSON package (2.30 × 2.55 × 0.60 mm)  
APPLICATION  
GSM Triple/Quad band digital cellular  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
2027  
Supplying Form  
Embossed tape 8 mm wide  
µPG2027TQ-E1  
10-pin plastic TSON  
Pin 5, 6 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2027TQ  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10501EJ01V0DS (1st edition)  
Date Published June 2004 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices, Ltd. 2004  

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