Datasheet > UPG2022T5G-E1

UPG2022T5G-E1

更新时间： 2024-01-02 08:59:29

品牌	Logo	应用领域
日电电子 - NEC		射频微波光电二极管
页数	文件大小	规格书
8页	63K
描述
SPDT, 4800MHz Min, 5850MHz Max, 1.1dB Insertion Loss-Max, 2 X 3 MM, 0.75 MM HEIGHT, PLASTIC, SON-6

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技术参数
数据手册

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UPG2022T5G-E1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	2 X 3 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, SON-6	Reach Compliance Code：	compliant
风险等级：	5.83	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	36.02 dBm	最大插入损耗：	1.1 dB
最大工作频率：	5850 MHz	最小工作频率：	4800 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	SPDT	Base Number Matches：	1

UPG2022T5G-E1 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2022T5G

GaAs MMIC SPDT HIGH POWER SWITCH FROM 4.8 TO 5.85 GHz

DESCRIPTION

The µPG2022T5G is a GaAs FET MMIC SPDT (Single Pole Double Throw) high power switch. The device can

operate from 4.8 to 5.85 GHz, having the low insertion loss. It housed in a 6-pin plastic SON package.

FEATURES

•

Operating frequency

Low insertion loss

: f = 4.8 to 5.85 GHz

: L^INS= 0.8 dB TYP. @ f = 4.9 GHz

: L^INS= 0.7 dB TYP. @ f = 5.2 GHz

: L^INS= 0.8 dB TYP. @ f = 5.8 GHz

•

Handling power

Control voltage

High isolation

: P^{in (0.1 dB)}= +31 dBm TYP. @ f = 4.8 to 5.85 GHz

: V^cont= +2.8 V/0 V

: ISL1 (between OUTPUT1 and OUTPUT2) = 22 dB TYP. @ f = 5.2 GHz

: ISL2 (between INPUT and OUTPUT) = 23 dB TYP. @ f = 5.2 GHz

•

Input/output return loss : RLⁱⁿ/RLout=10 dB MIN. @ f = 4.8 to 5.85 GHz

Switching speed : 20 ns @ t^RISE/tFALL (10/90% RF)

6-pin plastic SON package (2.0 × 3.0 × 0.75 mm)

APPLICATIONS

•

5 GHz band wireless LAN

ORDERING INFORMATION

Part Number

Package

Marking

G4H

Supplying Form

• Embossed tape 8 mm wide

µPG2022T5G-E1 6-pin plastic SON

• Pin 1 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2022T5G

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10472EJ01V0DS (1st edition)

Date Published March 2004 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 2003, 2004

12 3 4 5 6 7 8

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