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UPG2009TB_1 PDF预览

UPG2009TB_1

更新时间: 2022-12-19 05:20:00
品牌 Logo 应用领域
日电电子 - NEC 开关光电二极管高功率电源
页数 文件大小 规格书
10页 80K
描述
L-BAND HIGH POWER SPDT SWITCH

UPG2009TB_1 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2009TB  
L-BAND HIGH POWER SPDT SWITCH  
DESCRIPTION  
The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital  
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion  
loss and high isolation by 2.8 V control voltage.  
FEATURES  
Low insertion loss  
: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz  
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz  
: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz  
: Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz  
High isolation  
High power  
6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
APPLICATION  
L-band digital cellular or cordless telephone  
BuletoothTM, W-LAN and WLL applications  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G2U  
Supplying Form  
Embossed tape 8 mm wide  
µPG2009TB-E3  
6-pin super minimold  
Pin 1, 2, 3 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2009TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10191EJ02V0DS (2nd edition)  
Date Published July 2004 CP(K)  
Printed in Japan  
The mark  shows major revised points.  
NEC Compound Semiconductor Devices, Ltd. 2002, 2004  

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