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UPD464536ALS1-A55 PDF预览

UPD464536ALS1-A55

更新时间: 2024-09-24 23:40:19
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器信息通信管理
页数 文件大小 规格书
28页 285K
描述
x36 Fast Synchronous SRAM

UPD464536ALS1-A55 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µ
PD464518AL, 464536AL  
4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM  
256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT  
LVTTL INTERFACE/REGISTER-LATCH/LATE WRITE  
Description  
The µPD464518AL is a 262,144 words by 18 bits, and the µPD464536AL is a 131,072 words by 36 bits  
synchronous static RAM fabricated with advanced Bi-CMOS technology using N-channel memory cell.  
This technology and unique peripheral circuits make the µPD464518AL and µPD464536AL a high-speed device.  
The µPD464518AL and µPD464536AL are suitable for applications which require high-speed, low voltage, high-  
density memory and wide bit configuration, such as cache and buffer memory.  
These are packaged in a 119-pin plastic BGA (Ball Grid Array).  
Features  
Register to latch synchronous operation  
LVTTL 3.3 V Input / Output levels  
Fast clock access time : 5.5 ns / 182 MHz, 6.0 ns / 166 MHz, 7.0 ns / 143 MHz  
Asynchronous output enable control : /G  
Single differential clock inputs  
Byte write control : /SBa (DQa1-9), /SBb (DQb1-9), /SBc (DQc1-9), /SBd (DQd1-9)  
Common I/O using three-state outputs  
Internally self-timed write cycle  
Late write with 1 dead cycle between Read-Write  
Boundary scan (JTAG) IEEE 1149.1 compatible  
Single +3.3 V power supply  
Sleep mode : ZZ(Enables sleep mode, active high)  
Ordering Information  
Part number  
µPD464518ALS1-A55  
µPD464518ALS1-A6  
µPD464518ALS1-A7  
µPD464536ALS1-A55  
µPD464536ALS1-A6  
µPD464536ALS1-A7  
Access time  
5.5 ns  
Clock frequency  
182 MHz  
Package  
119-pin plastic BGA  
6.0 ns  
166 MHz  
7.0 ns  
143 MHz  
5.5 ns  
182 MHz  
6.0 ns  
166 MHz  
7.0 ns  
143 MHz  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M13609EJ4V0DS00 (4th edition)  
Date Published January 2001 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1999  
©

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