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UPD4664312F9-B65X-CR2 PDF预览

UPD4664312F9-B65X-CR2

更新时间: 2024-09-24 22:11:47
品牌 Logo 应用领域
日电电子 - NEC 存储内存集成电路静态存储器
页数 文件大小 规格书
36页 296K
描述
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

UPD4664312F9-B65X-CR2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:12 X 9 MM, FBGA-93Reach Compliance Code:compliant
风险等级:5.92最长访问时间:65 ns
JESD-30 代码:R-PBGA-B93JESD-609代码:e0
长度:12 mm内存密度:67108864 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:93
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):3.1 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL EXTENDED端子面层:TIN LEAD
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:9 mmBase Number Matches:1

UPD4664312F9-B65X-CR2 数据手册

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PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD4664312-X  
64M-BIT CMOS MOBILE SPECIFIED RAM  
4M-WORD BY 16-BIT  
EXTENDED TEMPERATURE OPERATION  
Description  
The µPD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile  
Specified RAM featuring Low Power Static RAM compatible function and pin configuration.  
The µPD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell.  
The µPD4664312-X is packed in 93-pin TAPE FBGA.  
Features  
4,194,304 words by 16 bits organization  
Fast access time: 65, 75 ns (MAX.)  
Fast page access time: 18, 25 ns (MAX.)  
Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15)  
Low voltage operation:2.7 to 3.1 V (-B65X)  
2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X)  
Operating ambient temperature: TA = –25 to +85 °C  
Output Enable input for easy application  
Chip Enable input: /CS pin  
Standby Mode input: MODE pin  
Standby Mode1: Normal standby (Memory cell data hold valid)  
Standby Mode2: Density of memory cell data hold is variable  
µPD4664312  
Access  
time  
Operating supply  
Operating  
ambient  
Supply current  
voltage  
V
At operating  
At standby µA (MAX.)  
ns (MAX.)  
temperature mA (MAX.)  
°C  
Density of data hold  
Chip  
I/O  
64M bits 16M bits 8M bits 4M bits 0M bit  
-B65X  
-BE75X Note  
65  
75  
2.7 to 3.1  
–25 to +85  
45  
40  
100  
60  
50  
45  
10  
2.7 to 3.1 1.65 to 2.1  
Note Under development  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M15867EJ5V0DS00 (5th edition)  
Date Published August 2002 NS CP (K)  
Printed in Japan  
The mark  shows major revised points.  
2001  
©

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