Datasheet > UPD434008ALLE-A20

UPD434008ALLE-A20

更新时间： 2024-11-30 23:40:15

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
16页	123K
描述
x8 SRAM

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中文翻译

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数据手册

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UPD434008ALLE-A20 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD434008AL

4M-BIT CMOS FAST SRAM

512K-WORD BY 8-BIT

Description

The µPD434008AL is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM.

Operating supply voltage is 3.3 V ± 0.3 V.

The µPD434008AL is packaged in 36-pin plastic SOJ.

Features

• 524,288 words by 8 bits organization

• Fast access time : 15, 17, 20 ns (MAX.)

• Output Enable input for easy application

• Single +3.3 V power supply

Ordering Information

Part number

Package

Access time

Supply current mA (MAX.)

At operating At standby

ns (MAX.)

µPD434008ALLE-A15

µPD434008ALLE-A17

µPD434008ALLE-A20

36-pin plastic SOJ

(10.16 mm (400))

150

140

130

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M12227EJ5V0DS00 (5th edition)

Date Published May 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1996

12 3 4 5 6 7...16

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