Datasheet > UPD43256BGU-85L-E2-A

UPD43256BGU-85L-E2-A

更新时间： 2024-11-06 06:33:15

品牌	Logo	应用领域
日电电子 - NEC		静态存储器光电二极管
页数	文件大小	规格书
24页	309K
描述
32KX8 STANDARD SRAM, 85ns, PDSO28, 0.450 INCH, LEAD FREE, PLASTIC, SOP-28

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DATA SHEET

MOS INTEGRATED CIRCUIT

μPD43256B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

Description

The μPD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available. And A and B versions are wide voltage operations.

The μPD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).

Features

• 32,768 words by 8 bits organization

• Fast access time: 70, 85, 100, 120 ns (MAX.)

• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

• Low VCC data retention: 2.0 V (MIN.)

• /OE input for easy application

Part number

Access time

ns (MAX.)

Operating supply Operating ambient

Supply current

voltage

temperature

°C

At operating

mA (MAX.)

At standby At data retention

μA (MAX.)

μA (MAX.) ^Note1

μPD43256B-xxL

μPD43256B-xxLL

μPD43256B-Axx

μPD43256B-Bxx ^Note2

70, 85

4.5 to 5.5

0 to 70

85, 100 ^Note2, 120 ^Note2

100, 120

3.0 to 5.5

2.7 to 5.5

Notes 1. TA ≤ 40 °C, VCC = 3.0 V

2. Access time: 85 ns (MAX.) (VCC = 4.5 to 5.5 V)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M10770EJFV0DS00 (15th edition)

Date Published November 2008

Printed in Japan

1990, 1993, 1994

12 3 4 5 6 7...24

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