5秒后页面跳转
UPD43256BGU-85LL-E2 PDF预览

UPD43256BGU-85LL-E2

更新时间: 2024-11-24 19:56:07
品牌 Logo 应用领域
日电电子 - NEC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
24页 309K
描述
Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28

UPD43256BGU-85LL-E2 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP,
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.08最长访问时间:85 ns
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:18 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:3 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.4 mm
Base Number Matches:1

UPD43256BGU-85LL-E2 数据手册

 浏览型号UPD43256BGU-85LL-E2的Datasheet PDF文件第2页浏览型号UPD43256BGU-85LL-E2的Datasheet PDF文件第3页浏览型号UPD43256BGU-85LL-E2的Datasheet PDF文件第4页浏览型号UPD43256BGU-85LL-E2的Datasheet PDF文件第5页浏览型号UPD43256BGU-85LL-E2的Datasheet PDF文件第6页浏览型号UPD43256BGU-85LL-E2的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
μPD43256B  
256K-BIT CMOS STATIC RAM  
32K-WORD BY 8-BIT  
Description  
The μPD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.  
Battery backup is available. And A and B versions are wide voltage operations.  
The μPD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).  
Features  
32,768 words by 8 bits organization  
Fast access time: 70, 85, 100, 120 ns (MAX.)  
Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)  
Low VCC data retention: 2.0 V (MIN.)  
/OE input for easy application  
Part number  
Access time  
ns (MAX.)  
Operating supply Operating ambient  
Supply current  
voltage  
V
temperature  
°C  
At operating  
mA (MAX.)  
At standby At data retention  
μA (MAX.)  
μA (MAX.) Note1  
μPD43256B-xxL  
μPD43256B-xxLL  
μPD43256B-Axx  
μPD43256B-Bxx Note2  
70, 85  
4.5 to 5.5  
0 to 70  
45  
50  
15  
3
2
85, 100 Note2, 120 Note2  
100, 120  
3.0 to 5.5  
2.7 to 5.5  
Notes 1. TA 40 °C, VCC = 3.0 V  
2. Access time: 85 ns (MAX.) (VCC = 4.5 to 5.5 V)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. M10770EJFV0DS00 (15th edition)  
Date Published November 2008  
Printed in Japan  
1990, 1993, 1994  

与UPD43256BGU-85LL-E2相关器件

型号 品牌 获取价格 描述 数据表
UPD43256BGU-85LL-E2-A NEC

获取价格

32KX8 STANDARD SRAM, 85ns, PDSO28, 0.450 INCH, LEAD FREE, PLASTIC, SOP-28
UPD43256BGU-85X ETC

获取价格

x8 SRAM
UPD43256BGU-85Y ETC

获取价格

x8 SRAM
UPD43256BGU-A10 NEC

获取价格

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-A10-A NEC

获取价格

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-A12 NEC

获取价格

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-A12-A NEC

获取价格

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-A85 NEC

获取价格

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-A85-A NEC

获取价格

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
UPD43256BGU-B10 NEC

获取价格

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT