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UPD43256BGW-70X-9KL-A PDF预览

UPD43256BGW-70X-9KL-A

更新时间: 2024-11-24 03:15:03
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
20页 172K
描述
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

UPD43256BGW-70X-9KL-A 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
μPD43256B-X  
256K-BIT CMOS STATIC RAM  
32K-WORD BY 8-BIT  
EXTENDED TEMPERATURE OPERATION  
Description  
The μPD43256B-X is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.  
The μPD43256B-X is an extended-operating-temperature version of the μPD43256B (X version : TA = –25 to +85°C).  
And A and B versions are low voltage operations. Battery backup is available.  
The μPD43256B-X is packed in 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).  
Features  
32,768 words by 8 bits organization  
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)  
Operating ambient temperature: TA = –25 to +85 °C  
Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)  
Low VCC data retention: 2.0 V (MIN.)  
/OE input for easy application  
Part number  
Access time  
Operating supply Operating ambient  
Supply current  
ns (MAX.)  
voltage  
V
temperature  
°C  
At operating  
mA (MAX.)  
At standby  
At data retention  
μA (MAX.) Note1  
μA (MAX.)  
μPD43256B-xxX  
25 to +85  
70, 85  
4.5 to 5.5  
3.0 to 5.5  
2.7 to 5.5  
45  
50  
2
85Note2, 100, 120Note2  
100, 120Note2, 150Note2  
μPD43256B-AxxX  
μPD43256B-BxxXNote2  
40  
Notes 1. TA 40 °C, VCC = 3.0 V  
2. 100 ns (MAX.) (VCC = 4.5 to 5.5 V)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. M11012EJ6V0DS00 (6th edition)  
Date Published June 2006 NS CP (K)  
Printed in Japan  
1995  

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