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UPD29F064115GZ-DB85X-MJH PDF预览

UPD29F064115GZ-DB85X-MJH

更新时间： 2024-11-13 22:07:39
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32页 249K
描述
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE

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UPD29F064115GZ-DB85X-MJH 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, PLASTIC, TSOP1-48针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.92
最长访问时间：85 ns启动块：BOTTOM/TOP
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
长度：18.4 mm内存密度：67108864 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：48
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-25 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
编程电压：1.8 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：2.1 V
最小供电电压 (Vsup)：1.8 V标称供电电压 (Vsup)：1.95 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：TIN LEAD
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

UPD29F064115GZ-DB85X-MJH 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD29F064115-X  
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY  
4M-WORD BY 16-BIT (WORD MODE)  
PAGE MODE  
Description  
The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can  
be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire  
chip can be erased. Memory organization is 4,194,304 words × 16 bits, so that the memory can be programmed in  
word units. µPD29F064115-X can be read high speed with page mode.  
The µPD29F064115-X can be read while its contents are being erased or programmed. The memory cell is divided  
into four banks. While sectors in any bank are being erased or programmed, data can be read from the other three  
banks thanks to the simultaneous execution architecture. The banks are 8M bits, 24M bits, 24M bits and 8M bits.  
Input /output voltage is supplied to 2.7 to 3.3 V.  
Because the µPD29F064115-X enables the boot sector to be erased, it is ideal for storing a boot program. In  
addition, program code that controls the flash memory can be also stored, and the program code can be programmed  
or erased without the need to load it into RAM. 16 small sectors for storing parameters are provided, each of which  
can be erased in 4K words units.  
Once a program or erase command sequence has been executed, an automatic program or automatic erase  
function internally executes program or erase and verification automatically. The programming time is about 0.5  
seconds per sector. The erase time is less than 1 second per sector.  
Because the µPD29F064115-X can be electrically erased or programmed by writing an instruction, data can be  
reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of  
applications.  
This flash memory is packed in 48-pin PLASTIC TSOP (I), 63-pin TAPE FBGA and 85-pin TAPE FBGA.  
Features  
• Four bank organization enabling simultaneous execution of program / erase and read  
• High-speed read with page mode  
• Bank organization : 4 banks (8M bits + 24M bits + 24M bits + 8M bits)  
• Memory organization : 4,194,304 words × 16 bits  
• Sector organization : 142 sectors (4K words × 16 sectors, 32K words × 126 sectors)  
The boot sector is located at the highest address (sector) and the lowest address (sector)  
• 3-state output  
• Automatic program  
• Program suspend / resume  
• Unlock bypass program  
• Automatic erase  
• Chip erase  
• Sector erase (sectors can be combined freely)  
• Erase suspend / resume  
• Program / Erase completion detection  
• Detection through data polling and toggle bits  
• Detection through RY (/BY) pin  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M16062EJ2V0DS00 (2nd edition)  
Date Published September 2002 NS CP (K)  
Printed in Japan  
The mark # shows major revised points.  
2002  
©
1234567...32

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