是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | POWER, SOP-8 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 雪崩能效等级(Eas): | 12.1 mJ |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.0186 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3/e6 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 88 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN/TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2754GR-E1-AT | RENESAS |
获取价格 |
Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8, SOP, /Embossed Tape | |
UPA2754GR-E2 | RENESAS |
获取价格 |
UPA2754GR-E2 | |
UPA2754GR-E2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,11A I(D),SO | |
UPA2755GR | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET | |
UPA2756GR | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET | |
UPA2756GR-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO | |
UPA2756GR-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO | |
UPA2756GR-E1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO | |
UPA2756GR-E2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO | |
UPA2756GR-E2-AT | RENESAS |
获取价格 |
Power MOSFETs for Automotive, SOP, / |