是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOP |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.77 |
雪崩能效等级(Eas): | 12.1 mJ | 配置: | SEPARATE, 2 ELEMENTS |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 11 A |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.0186 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 88 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2754GR-E2 | RENESAS |
获取价格 |
UPA2754GR-E2 |
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UPA2754GR-E2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,11A I(D),SO |
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UPA2755GR | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |
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UPA2756GR | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |
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UPA2756GR-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO |
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UPA2756GR-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO |
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UPA2756GR-E1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO |
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UPA2756GR-E2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO |
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UPA2756GR-E2-AT | RENESAS |
获取价格 |
Power MOSFETs for Automotive, SOP, / |
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UPA2757GR | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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