DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2707TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The µ PA2707TP which has a heat spreader is N-
channel MOS Field Effect Transistor designed for
DC/DC converter and power management applications
of notebook computer.
PART NUMBER
µ PA2707TP-E1
PACKAGE
Power HSOP8
Power HSOP8
Power HSOP8
Power HSOP8
Note
Note
µ PA2707TP-E1-AZ
µ PA2707TP-E2
FEATURES
µ PA2707TP-E2-AZ
• Low on-state resistance
Note Pb-free (This product does not contain Pb in
RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
30
V
20
V
42
A
Drain Current (pulse) Note1
76
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation Note2
Channel Temperature
40
W
W
°C
°C
A
PT2
4.3
150
Tch
Storage Temperature
Tstg
−55 to +150
19
Single Avalanche Current Note3
Single Avalanche Energy Note3
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
IAS
EAS
36
mJ
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Ambient Note
Rth(ch-A)
Rth(ch-C)
96.2
3.13
°C/W
°C/W
Channel to Case
Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17035EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004