Datasheet > UP2003G-TN3-R

UP2003G-TN3-R

更新时间： 2024-01-20 05:32:42

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	253K
描述
P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UP2003G-TN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UP2003

Power MOSFET

9A, 25V P-CHANNEL LOGIC

LEVEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR



DESCRIPTION

The UP2003 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.



FEATURES

* R_DS(ON)<35 mΩ @ V_GS=-4.5 V, I_D=-7 A

* R_DS(ON)<20 mΩ @ V_GS=-10 V, I_D=-9 A



SYMBOL

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-252

Packing

Lead Free

Halogen Free

UP2003G-TN3-R

UP2003L-TN3-R

Tape Reel



MARKING

www.unisonic.com.tw

1 of 5

QW-R502-202.C

12 3 4 5

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型号	品牌	获取价格	描述	数据表
UP2003L-TN3-R	UTC	获取价格	P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UP2003L-TN3-T	UTC	获取价格	P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UP2003-TN3-R	UTC	获取价格	P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UP2003-TN3-T	UTC	获取价格	P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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