Datasheet > UP2518

UP2518

更新时间： 2024-09-26 03:23:19

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
4页	117K
描述
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS

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中文翻译

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数据手册

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UP2518 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UP2518

PNP EPITAXIAL SILICON TRANSISTOR

LOW V_CE(SAT)PNP SILICON

POWER TRANSISTORS

ꢀ

FEATURES

* Extremely low collector-emitter saturation voltage V_CE(SAT)and

corresponding extremely low equivalent on-resistance R_CE(SAT)

(97mΩ at 1.5A)

* High collector current capability(1.5A)

* High peak pulse current up to 6A

* High collector current gain

SOT-23

*Pb-free plating product number: UP2518L

ꢀ PIN CONFIGURATION

PIN NO.

PIN NAME

EMITTER

BASE

COLLECTOR

ꢀ

ORDERING INFORMATION

Order Number

Package

SOT-23

Packing

Normal

Lead Free Plating

UP2518L-AE3-6-R

UP2518-AE3-6-R

Tape Reel

MARKING INFORMATION

Y18

www.unisonic.com.tw

1 of 4

QW-R206-083,A

12 3 4

中文翻译

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