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UP2790G-S08-R PDF预览

UP2790G-S08-R

更新时间: 2024-11-09 21:20:43
品牌 Logo 应用领域
友顺 - UTC 开关脉冲光电二极管晶体管
页数 文件大小 规格书
5页 149K
描述
Power Field-Effect Transistor, 6A I(D), 30V, 0.053ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, SOP-8

UP2790G-S08-R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
雪崩能效等级(Eas):3.6 mJ配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.053 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UP2790G-S08-R 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
UP2790  
Preliminary  
Power MOSFET  
SWITCHING N- AND  
P-CHANNEL POWER MOSFET  
„
DESCRIPTION  
The UTC UP2790 uses advanced technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use in Motor Drive application..  
„
FEATURES  
*
Low on-state resistance:  
N-channel: VGS =10V, ID=3A: RDS(ON) = 28 m(MAX)  
V
GS=4.5V, ID=3A: RDS(ON) = 40 m(MAX)  
P-channel: VGS= -10V, ID=-3A: RDS(ON) = 60 m(MAX)  
GS=-4.5V, ID=-3A: RDS(ON) = 80 m(MAX)  
V
*
Low input capacitance  
N-channel : CISS with 500 pF (Typ.)  
P-channel : CISS with 460 pF (Typ.)  
Built-in gate protection diode  
Halogen Free  
*
*
„
SYMBOL  
(5,6)  
D2  
(7,8)  
D1  
(4)  
G2  
(2)  
G1  
S2(3)  
S1(1)  
P MOS  
N MOS  
„ ORDERING INFORMATION  
Ordering Number  
UP2790G-S08-R  
Package  
SOP-8  
Packing  
Tape Reel  
www.unisonic.com.tw  
1 of 5  
Copyright © 2009 Unisonic Technologies Co., Ltd  
QW-R502-339.a  

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