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UP2003L-TN3-R PDF预览

UP2003L-TN3-R

更新时间: 2024-02-02 05:08:12
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管场效应晶体管
页数 文件大小 规格书
5页 221K
描述
P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UP2003L-TN3-R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (ID):9 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UP2003L-TN3-R 数据手册

 浏览型号UP2003L-TN3-R的Datasheet PDF文件第2页浏览型号UP2003L-TN3-R的Datasheet PDF文件第3页浏览型号UP2003L-TN3-R的Datasheet PDF文件第4页浏览型号UP2003L-TN3-R的Datasheet PDF文件第5页 
UNISONIC TECHNOLOGIES CO., LTD  
UP2003  
Power MOSFET  
P-CHANNEL LOGIC LEVEL  
ENHANCEMENT MODE FIELD  
EFFECT TRANSISTOR  
„
DESCRIPTION  
The UP2003 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in PWM  
applications.  
„
FEATURES  
* VDS(V)=-25V  
* ID=-9 A  
*Pb-free plating product number: UP2003L  
* RDS(ON)<35 m@ VGS =-4.5 V, ID =-7 A  
* RDS(ON)<20 m@ VGS =-10 V, ID =-9 A  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
UP2003L-TN3-R  
UP2003L-TN3-T  
1
G
G
2
D
D
3
S
S
UP2003-TN3-R  
UP2003-TN3-T  
TO-252  
TO-252  
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 5  
Copyright © 2008 Unisonic Technologies Co., Ltd  
QW-R502-202.B  

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