Datasheet > UP2003-TN3-T

UP2003-TN3-T

更新时间： 2024-02-27 17:29:57

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	221K
描述
P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UP2003-TN3-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UP2003

Power MOSFET

P-CHANNEL LOGIC LEVEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

DESCRIPTION

The UP2003 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* V_DS(V)=-25V

* I_D=-9 A

*Pb-free plating product number: UP2003L

* R_DS(ON)<35 mΩ@ V_GS=-4.5 V, I_D=-7 A

* R_DS(ON)<20 mΩ@ V_GS=-10 V, I_D=-9 A

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

UP2003L-TN3-R

UP2003L-TN3-T

UP2003-TN3-R

UP2003-TN3-T

TO-252

Tape Reel

Tube

www.unisonic.com.tw

1 of 5

QW-R502-202.B

12 3 4 5

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