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UNR921LG PDF预览

UNR921LG

更新时间: 2024-11-25 19:45:39
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
20页 513K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

UNR921LG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

UNR921LG 数据手册

 浏览型号UNR921LG的Datasheet PDF文件第2页浏览型号UNR921LG的Datasheet PDF文件第3页浏览型号UNR921LG的Datasheet PDF文件第4页浏览型号UNR921LG的Datasheet PDF文件第5页浏览型号UNR921LG的Datasheet PDF文件第6页浏览型号UNR921LG的Datasheet PDF文件第7页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNR921xG Series  
Silicon NPN epitaxial planar type  
For digital circuits  
Features  
Package  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
Cde  
SSMini3-F
SS-Mini type package, allowing automatic insertion through ape  
packing.  
Pin Na
1: Base  
2ter  
llecor  
Resistance by Part Number  
Marking Symbol (R1)  
)  
Internal Connection  
UNR9210G  
UNR9211G  
UNR9212G  
UNR9213G  
UNR9214G  
UNR9215G  
UNR9216G  
UNR9217G  
UNR9218G  
UNR9219
UNR921AG  
UNR921
UNR9
UNR9G  
UN921EG  
UNR921FG  
UNR9
U
U
UNR
UNR921
UNR921VG  
8L  
8A  
8B  
8C  
8F  
47 kΩ  
10 kΩ  
22 kΩ  
7 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 k
Ω  
0 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
5.1 kΩ  
10 kΩ  
100 kΩ  
47 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
R1  
C
E
B
R2  
H  
8I  
8K  
8X  
8Y  
8Z  
M  
8N  
O  
8P  
Ω  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
8Q  
EL  
EX  
EZ  
FD  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
125  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
125  
Tstg  
55 to +125  
°C  
Publication date: July 2008  
SJH00241BED  
1

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