5秒后页面跳转
UNR9119J PDF预览

UNR9119J

更新时间: 2024-09-15 22:24:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
19页 478K
描述
Silicon PNP epitaxial planar type

UNR9119J 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-89包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84其他特性:BUILT IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

UNR9119J 数据手册

 浏览型号UNR9119J的Datasheet PDF文件第2页浏览型号UNR9119J的Datasheet PDF文件第3页浏览型号UNR9119J的Datasheet PDF文件第4页浏览型号UNR9119J的Datasheet PDF文件第5页浏览型号UNR9119J的Datasheet PDF文件第6页浏览型号UNR9119J的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR911xJ Series (UN911xJ Series)  
Silicon PNP epitaxial planar type  
Unit: mm  
+0.05  
1.60  
–0.03  
+0.03  
For digital circuits  
0.12  
–0.01  
1.00 0.05  
3
Features  
Costs can be reduced through downsizing of the equipment and  
1
2
reduction of the number of parts.  
SS-Mini type package, allowing automatic insertion through tape  
packing.  
0.27 0.02  
(0.50)(0.50)  
Resistance by Part Number  
5˚  
Marking Symbol (R1)  
(R2)  
UNR9110J (UN9110J) 6L  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
UNR9111J (UN9111J) 6A  
UNR9112J (UN9112J) 6B  
UNR9113J (UN9113J) 6C  
UNR9114J (UN9114J) 6D  
UNR9115J (UN9115J) 6E  
UNR9116J (UN9116J) 6F  
UNR9117J (UN9117J) 6H  
UNR9118J (UN9118J) 6I  
UNR9119J (UN9119J) 6K  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
5.1 kΩ  
10 kΩ  
100 kΩ  
47 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-89  
SSMini3-F1 Package  
Internal Connection  
R1  
B
C
E
UNR911AJ  
UNR911BJ  
UNR911CJ  
6X  
6Y  
6Z  
100 kΩ  
100 kΩ  
R2  
UNR911DJ (UN911DJ) 6M  
UNR911EJ (UN911EJ) 6N  
UNR911FJ (UN911FJ) 6O  
UNR911HJ (UN911HJ) 6P  
UNR911LJ (UN911LJ) 6Q  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
UNR911MJ  
UNR911NJ  
EI  
EW  
UNR911TJ (UN911TJ) EY  
UNR911VJ FC  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
125  
125  
Tstg  
55 to +125  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00038BED  
1

与UNR9119J相关器件

型号 品牌 获取价格 描述 数据表
UNR9119J(UN9119J) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR9119J|UN9119J ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR911AG PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR911AJ PANASONIC

获取价格

Silicon PNP epitaxial planar type
UNR911AJ0L PANASONIC

获取价格

TRANS PNP 50V 100MA W/RES SSMINI
UNR911BJ PANASONIC

获取价格

Silicon PNP epitaxial planar type
UNR911CJ PANASONIC

获取价格

Silicon PNP epitaxial planar type
UNR911D ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UNR911DG PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR911DJ PANASONIC

获取价格

Silicon PNP epitaxial planar type