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UNR612X(UN612X) PDF预览

UNR612X(UN612X)

更新时间: 2024-11-05 23:39:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
7页 120K
描述
Composite Device - Transistors with built-in Resistor

UNR612X(UN612X) 数据手册

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Transistors with built-in Resistor  
UNR6121/6122/6123/6124/612X/612Y  
(UN6121/6122/6123/6124/612X/612Y)  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For digital circuits  
6.9±0.1  
4.0  
2.5±0.1  
1.05  
±0.05  
(1.45)  
0.8  
0.7  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
0.65 max.  
MT-1 type package, allowing supply with the radial taping.  
0.45+00..015  
Resistance by Part Number  
2.5±0.5 2.5±0.5  
(R1)  
2.2k  
4.7KΩ  
10kΩ  
(R2)  
2.2kΩ  
4.7kΩ  
10kΩ  
10kΩ  
5kΩ  
1
2
3
UNR6121  
UNR6122  
UNR6123  
UNR6124  
UNR612X  
UNR612Y  
1 : Emitter  
2 : Collector  
3 : Base  
2.2kΩ  
0.27kΩ  
3.1kΩ  
MT-1-A1 Pakage  
4.6kΩ  
Absolute Maximum Ratings (Ta=25˚C)  
Internal Connection  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
C
E
Collector to base voltage  
Collector to emitter voltage  
Collector current  
R1  
B
–50  
V
–500  
mA  
mW  
˚C  
R2  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
600  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The Part numbers in the Parenthesis show conventional part number.  
1

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