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UNR6216 PDF预览

UNR6216

更新时间: 2024-10-30 21:02:47
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
14页 220K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT1, 3 PIN

UNR6216 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84Is Samacsys:N
其他特性:BUILT IN BIAS RESISTORS最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):160JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UNR6216 数据手册

 浏览型号UNR6216的Datasheet PDF文件第2页浏览型号UNR6216的Datasheet PDF文件第3页浏览型号UNR6216的Datasheet PDF文件第4页浏览型号UNR6216的Datasheet PDF文件第5页浏览型号UNR6216的Datasheet PDF文件第6页浏览型号UNR6216的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR6211/6212/6213/6214/6215/6216/6217/  
6218/6219/6210/621D/621E/621F/621K/621L  
(UN6211/6212/6213/6214/6215/6216/6217/6218/6219/  
6210/621D/621E/621F/621K/621L)  
Unit: mm  
Silicon NPN epitaxial planer transistor  
6.9±0.1  
(4.0)  
2.5±0.1  
(0.8)  
(0.7)  
For digital circuits  
0.65 max.  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
MT-1 type package, allowing supply with the radial taping.  
+0.10  
–0.05  
+0.10  
0.45  
0.45  
–0.05  
1.05±0.05  
2.5±0.5  
Resistance by Part Number  
2.5±0.5  
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
UNR6211  
UNR6212  
UNR6213  
UNR6214  
UNR6215  
UNR6216  
UNR6217  
UNR6218  
UNR6219  
UNR6210  
UNR621D  
UNR621E  
UNR621F  
UNR621K  
UNR621L  
1
2
3
MT-1-A1 Pakage  
Internal Connection  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
C
E
R1  
B
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The Part numbers in the Parenthesis show conventional part number.  
1

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