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UNR6215Q PDF预览

UNR6215Q

更新时间: 2024-11-24 23:39:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 225K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71

UNR6215Q 数据手册

 浏览型号UNR6215Q的Datasheet PDF文件第2页浏览型号UNR6215Q的Datasheet PDF文件第3页浏览型号UNR6215Q的Datasheet PDF文件第4页浏览型号UNR6215Q的Datasheet PDF文件第5页浏览型号UNR6215Q的Datasheet PDF文件第6页浏览型号UNR6215Q的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR6211/6212/6213/6214/6215/6216/6217/  
6218/6219/6210/621D/621E/621F/621K/621L  
(UN6211/6212/6213/6214/6215/6216/6217/6218/6219/  
6210/621D/621E/621F/621K/621L)  
Unit: mm  
6.9 0.1  
4.0  
2.5 0.1  
1.05  
0.05  
Silicon NPN epitaxial planer transistor  
(1.45)  
0.8  
0.7  
For digital circuits  
0.65 max.  
Features  
I
G
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
MT-1 type package, allowing supply with the radial taping.  
0.45+00..015  
G
2.5 0.5 2.5 0.5  
1
2
3
Resistance by Part Number  
I
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR6211  
UNR6212  
UNR6213  
UNR6214  
UNR6215  
UNR6216  
UNR6217  
UNR6218  
UNR6219  
UNR6210  
UNR621D  
UNR621E  
UNR621F  
UNR621K  
UNR621L  
MT-1 Type Pakage  
Internal Connection  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
C
R1  
B
R2  
E
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

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