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UNR6212(UN6212) PDF预览

UNR6212(UN6212)

更新时间: 2024-11-05 23:39:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 225K
描述
Composite Device - Transistors with built-in Resistor

UNR6212(UN6212) 数据手册

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Transistors with built-in Resistor  
UNR6211/6212/6213/6214/6215/6216/6217/  
6218/6219/6210/621D/621E/621F/621K/621L  
(UN6211/6212/6213/6214/6215/6216/6217/6218/6219/  
6210/621D/621E/621F/621K/621L)  
Unit: mm  
Silicon NPN epitaxial planer transistor  
6.9±0.1  
(4.0)  
2.5±0.1  
(0.8)  
(0.7)  
For digital circuits  
0.65 max.  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
MT-1 type package, allowing supply with the radial taping.  
+0.10  
–0.05  
+0.10  
0.45  
0.45  
–0.05  
1.05±0.05  
2.5±0.5  
Resistance by Part Number  
2.5±0.5  
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
UNR6211  
UNR6212  
UNR6213  
UNR6214  
UNR6215  
UNR6216  
UNR6217  
UNR6218  
UNR6219  
UNR6210  
UNR621D  
UNR621E  
UNR621F  
UNR621K  
UNR621L  
1
2
3
MT-1-A1 Pakage  
Internal Connection  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
C
E
R1  
B
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The Part numbers in the Parenthesis show conventional part number.  
1

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