Datasheet > UNR5215|UN5215

UNR5215|UN5215

更新时间： 2022-01-18 16:03:00

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
17页	435K
描述
Composite Device - Transistors with built-in Resistor

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UNR5215|UN5215 数据手册

Transistors with built-in Resistor

UNR521x Series (UN521x Series)

Silicon NPN epitaxial planar type

Unit: mm

+0.10

–0.05

+0.1

For digital circuits

0.15

0.3

–0.0

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• S-Mini type package, allowing automatic insertion through the tape

packing and magazine packing

(0.65) (0.65)

1.3 0.1

2.0 0.2

■ Resistance by Part Number

10˚

Marking symbol (R₁)

(R₂)



• UNR5210 (UN5210)

• UNR5211 (UN5211)

• UNR5212 (UN5212)

• UNR5213 (UN5213)

• UNR5214 (UN5214)

• UNR5215 (UN5215)

• UNR5216 (UN5216)

• UNR5217 (UN5117)

• UNR5218 (UN5218)

• UNR5219 (UN5219)

• UNR521D (UN521D)

• UNR521E (UN521E)

• UNR521F (UN521F)

• UNR521K (UN521K)

• UNR521L (UN521L)

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

10 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ



1: Base

2: Emitter

3: Collector

EIAJ: SC-70

SMini3-G1 Package

Internal Connection



5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

22 kΩ

R₁

R₂

• UNR521M (UN521M) EL

• UNR521N (UN521N)

• UNR521T (UN521T)

• UNR521V (UN521V)

• UNR521Z (UN521Z)

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Collector current

I_C

P_T

T_j

100

°C

Total power dissipation

Junction temperature

Storage temperature

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2004

SJH00024CED

12 3 4 5 6 7...17

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