Transistors with built-in Resistor
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
(UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/521D/521E/
521F/521K/521L/521M/521N/521T/521V/521Z)
Silicon NPN epitaxial planer transistor
Unit: mm
+0.10
–0.05
+0.1
–0.0
0.15
0.3
3
For digital circuits
1
2
Features
■
(0.65) (0.65)
■
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1.3±0.1
2.0±0.2
■
10°
Resistance by Part Number
■
Marking Symbol (R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
UNR5211
UNR5212
UNR5213
UNR5214
UNR5215
UNR5216
UNR5217
UNR5218
UNR5219
UNR5210
UNR521D
UNR521E
UNR521F
UNR521K
UNR521L
UNR521M
UNR521N
UNR521T
UNR521V
UNR521Z
8A
8B
8C
8D
8E
8F
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
SMini3-G1 Package
8H
8I
Internal Connection
8K
8L
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
50
50
V
100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
150
Tj
150
Tstg
–55 to +150
˚C
Note.) The Part numbers in the Parenthesis show conventional part number.
1