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UNR5217(UN5217) PDF预览

UNR5217(UN5217)

更新时间: 2022-01-19 01:23:00
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
18页 284K
描述
Composite Device - Transistors with built-in Resistor

UNR5217(UN5217) 数据手册

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Transistors with built-in Resistor  
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/  
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z  
(UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/521D/521E/  
521F/521K/521L/521M/521N/521T/521V/521Z)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
+0.10  
–0.05  
+0.1  
–0.0  
0.15  
0.3  
3
For digital circuits  
1
2
Features  
(0.65) (0.65)  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
S-Mini type package, allowing automatic insertion through tape  
packing and magazine packing.  
1.3±0.1  
2.0±0.2  
10°  
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
UNR5211  
UNR5212  
UNR5213  
UNR5214  
UNR5215  
UNR5216  
UNR5217  
UNR5218  
UNR5219  
UNR5210  
UNR521D  
UNR521E  
UNR521F  
UNR521K  
UNR521L  
UNR521M  
UNR521N  
UNR521T  
UNR521V  
UNR521Z  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
EIAJ : SC–70  
SMini3-G1 Package  
8H  
8I  
Internal Connection  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
EZ  
FD  
FF  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
150  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

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