是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SC-70 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 0.21 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 160 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UNR521DR | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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UNR521DS | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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UNR521E | PANASONIC |
获取价格 |
Silicon NPN epitaxial planar type |
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UNR521E(UN521E) | ETC |
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複合デバイス - 抵抗内蔵型トランジスタ |
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UNR521E|UN521E | PANASONIC |
获取价格 |
Composite Device - Transistors with built-in Resistor |
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UNR521EG | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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UNR521F | PANASONIC |
获取价格 |
Silicon NPN epitaxial planar type |
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UNR521F(UN521F) | ETC |
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Composite Device - Transistors with built-in Resistor |
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UNR521F|UN521F | PANASONIC |
获取价格 |
Composite Device - Transistors with built-in Resistor |
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UNR521FR | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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