是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.82 |
其他特性: | BUILT IN BIAS RESISTOR RATIO IS 0.21 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-F3 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin/Bismuth (Sn/Bi) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UNR521DQ | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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UNR521DR | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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UNR521DS | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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UNR521E | PANASONIC |
获取价格 |
Silicon NPN epitaxial planar type |
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UNR521E(UN521E) | ETC |
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複合デバイス - 抵抗内蔵型トランジスタ |
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UNR521E|UN521E | PANASONIC |
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Composite Device - Transistors with built-in Resistor |
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UNR521EG | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |
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UNR521F | PANASONIC |
获取价格 |
Silicon NPN epitaxial planar type |
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UNR521F(UN521F) | ETC |
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Composite Device - Transistors with built-in Resistor |
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UNR521F|UN521F | PANASONIC |
获取价格 |
Composite Device - Transistors with built-in Resistor |
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